NESG3032M14 transistor equivalent, npn silicon germanium rf transistor.
* The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz
* Maximum stable power gain: MSG = 20..
of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of ea.
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